Paper
19 February 2018 High polarization purity operation of 99% in 9xx-nm broad stripe laser diodes
Rintaro Morohashi, Yuji Yamagata, Yoshikazu Kaifuchi, Katsuhisa Tada, Ryozaburo Nogawa, Yumi Yamada, Masayuki Yamaguchi
Author Affiliations +
Proceedings Volume 10514, High-Power Diode Laser Technology XVI; 105140B (2018) https://doi.org/10.1117/12.2288157
Event: SPIE LASE, 2018, San Francisco, California, United States
Abstract
Polarization characteristics of self-aligned stripe (SAS) laser diodes (LDs) and Ridge-LDs are investigated to realize highly efficient polarization beam combined (PBC) LD modules. Vertical layers of both lasers are designed identically. Near field patterns (NFP) of TM polarization for the Ridge-LD showed peaks at the side edges, as expected by the strain simulation. On the other hand, SAS-LD showed a relatively flat and weak profile. Polarization purity (ITE/ (ITE+ITM)) of SAS-LDs exceeds 99%, while those of the Ridge-LDs are as low as 96%. It is confirmed that our SAS-LDs are suitable sources for PBC with low power loss.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rintaro Morohashi, Yuji Yamagata, Yoshikazu Kaifuchi, Katsuhisa Tada, Ryozaburo Nogawa, Yumi Yamada, and Masayuki Yamaguchi "High polarization purity operation of 99% in 9xx-nm broad stripe laser diodes", Proc. SPIE 10514, High-Power Diode Laser Technology XVI, 105140B (19 February 2018); https://doi.org/10.1117/12.2288157
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KEYWORDS
Polarization

Semiconductor lasers

High power lasers

Metalorganic chemical vapor deposition

Near field

Waveguides

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